作者的详细信息

Агеева, Н. Н.

期	栏目	标题	文件
卷 68, 编号 3 (2023)	ОБЗОР	Intrinsic Stimulated Intense Picosecond Emission in the Amplification Saturation Mode and the “Threshold” State of Electron-Hole Plasma in the AlxGa1 – xAs–GaAs–AlxGa1 – xAs Heterostructure
卷 69, 编号 2 (2024)	PHYSICAL PROCESSES IN ELECTRONIC DEVICES	Dimensional resonance of intrinsic stimulated picosecond emission while it induces a photonic crystal and electron population oscillations in heterostructure Al_xGa_1–xAs–GaAs–Al_xGa_1–xAs
卷 69, 编号 7 (2024)	PHYSICAL PROCESSES IN ELECTRONIC DEVICES	Dynamics of dimensional resonance of intrinsic picosecond emission in the heterostructure of Al_xGa_1-xAs–GaAs–Al_xGa_1-xAs, in which this emission induces a photonic crystal and oscillations of electron population
卷 70, 编号 1 (2025)	PHYSICAL PROCESSES IN ELECTRONIC DEVICES	Changes in the intrinsic stimulated intense picosecond emission of the Al_xGa_1–xAs-GaAs-Al_xGa_1–xAs heterostructure due to the return of those part of the emission that was reflected from the end of the heterostructure to the active region
卷 70, 编号 2 (2025)	PHYSICAL PROCESSES IN ELECTRONIC DEVICES	Factors that reduce the duration of picosecond stimulated emission of the Al_xGa_1–xAs–GaAs–Al_xGa_1–xAs heterostructure