Thermodynamic Characterization of Volatile Alkylamine Boranes as Precursors for the Formation of BCxNy Films

S. V. Sysoev; Сысоев С. В.; V. S. Sulyaeva; Суляева В. С.; M. L. Kosinova; Косинова М. Л.

doi:10.31857/S0044457X22601535

Thermodynamic Characterization of Volatile Alkylamine Boranes as Precursors for the Formation of BCxNy Films

Autores: Sysoev S.V.¹, Sulyaeva V.S.¹, Kosinova M.L.¹
Afiliações:
1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences
Edição: Volume 68, Nº 2 (2023)
Páginas: 241-247
Seção: ФИЗИКО-ХИМИЧЕСКИЙ АНАЛИЗ НЕОРГАНИЧЕСКИХ СИСТЕМ
URL: https://rjmseer.com/0044-457X/article/view/665309
DOI: https://doi.org/10.31857/S0044457X22601535
EDN: https://elibrary.ru/LPNYDA
ID: 665309

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Resumo

Tensimetric studies were carried out to determine temperature-dependent saturated vapor pressures and calculate thermodynamic characteristics of vaporization for R3N·BH3 (R = Me or Et) alkylamine boranes. These compounds have sufficient volatility and thermal stability to be used as precursors in vapor deposition processes to produce films based on phases of the B–C–N system. Triethylamine borane (TEAB) was used to synthesize boron carbonitride films at 773 and 873 K. The resulting layers were characterized by ellipsometry, atomic force and scanning electron microscopy, FTIR, Raman, and energy dispersive spectroscopies. The conditions for the production of continuous homogeneous films consisting of nanoparticles 20–60 nm in size aggregated into larger pseudohexagonal particles were determined. The surfaces of the films have an average and root mean square roughness, equal to 0.8 and 1.0 nm, respectively.

Palavras-chave

saturated vapor pressure, trimethylamine borane, triethylamine borane, chemical vapor, deposition, boron carbonitride films

Bibliografia

Nehate S.D., Saikumar A.K., Prakash A., Sundaram K.B. // Mater. Today Adv. 2020. V. 8. P. 100106. https://doi.org/10.1016/j.mtadv.2020.100106
Козлов Д.А., Артамонов К.А., Ревенко А.О. и др. // Журн. неорган. химии. 2022. Т. 67. № 5. С. 646. https://doi.org/10.31857/S0044457X22050105
Puyoo G., Teyssandier F., Pailler R. et al. // Carbon. 2017. V. 122. P. 19. https://doi.org/10.1016/j.carbon.2017.06.024
Kimura C., Sota H., Aoki H., Sugino T. // Diam. Relat. Mater. 2009. V. 18. P. 478. https://doi.org/10.1016/j.diamond.2008.12.004
Qin L., Yu J., Kuang S. et al. // Nanoscale. 2012. V. 4. P. 120. https://doi.org/10.1039/c1nr11387a
Kumar N., Raidongia K., Mishra A.K. et al. // J. Solid State Chem. 2011. V. 184. P. 2902. https://doi.org/10.1016/j.jssc.2011.08.034
Bai X.D., Yu J., Liu S., Wang E.G. // Chem. Phys. Lett. 2000. V. 325. P. 485.
Суляева В.С., Кеслер В.Г., Косинова М.Л. // Журн. структур. химии. 2021. Т. 62. С. 1736. https://doi.org/10.26902/JSC_id87084
Zhou X., Zhang L., Zhang X. et al. // Appl. Surf. Sci. 2022. V. 583. P. 152502. https://doi.org/10.1016/j.apsusc.2022.152502
Seo T.H., Lee W., Lee K.S. et al. // Carbon. 2021. V. 182. P. 791. https://doi.org/10.1016/j.carbon.2021.06.080
Katsuia H., Harada K., Kondo N., Hotta M. // Surf. Coat. Technol. 2020. V. 394. P. 125851. https://doi.org/10.1016/j.surfcoat.2020.125851
Souqui L., Palisaitis J., Hogberg H., Pedersen H. // J. Mater. Chem. C. 2020. V. 8. P. 4112. https://doi.org/10.1039/d0tc00616e
Волков В.В., Мякишев К.Г. // Изв СО АН СССР. Cер. хим. наук. 1989. № 1. P. 23.
Chemical vapour deposition. Precursors, processes and application / Ed. Jones A.C., Hitchman M.L. RSC Publishing, 2009. 582 p.
Жерикова К.В., Макаренко А.М., Караковская К.И. и др. // Жур. общ. химии. 2021. Т. 91. № 10. С. 1479. https://doi.org/10.31857/S0044460X21100103
Суворов А.В. Термодинамическая химия парообразного состояния. Л.: Химия, 1970.
Vikulova E.S., Zhericova K.V., Sysoev S.V. et al. // J. Therm. Anal. Calorim. 2019. V. 137. P. 923. https://doi.org/10.1007/s10973-018-07991-y
Сысоев С.В., Мареев А.В., Цырендоржиева И.П. и др. // Журн. общ. химии. 2021. Т. 91. С. 1511. https://doi.org/10.31857/S0044460X2110005X
Kosinova M.L., Fainer N.I., Rumyantsev Yu.M. et al. // J. Phys. IV. France. 1999. V. 9. P. 8.
Alton E.R., Brown R.D., Carter J.C., Taylor R.C. // J. Am. Chem. Soc. 1959. V. 81. P. 3550.
Титов В.А., Коковин Г.А. // Математика в химической термодинамике. Сб. науч. тр. Новосибирск: Наука, 1980. С. 98.
Brame E.G., Margrave J.L., Meloche V.W. // J. Inorg. Nucl. Chem. 1957. V. 5. P. 48.
Rozenberg A.S., Sinenko Y.A., Chukanov N.V. // J. Mater. Sci. 1993. V. 28. P. 5675.
Tolstoy V.P., Chernyshova I.V., Skryshevsky V.A. Handbook of infrared spectroscopy of ultrathin films. Hoboken: John Wiley & Sons, 2003. 710 p.
Werheit H., Aupt H.H. // Z. Naturforsch. 1987. V. 42a. P. 925.
Shirai K., Emura S., Gonda S.I., Kumashiro Y. // J. Appl. Phys. 1995. V. 78. P. 3392.
Shin W.G., Calder S., Ugurlu O., Girshick S.L. // J. Nanoparticle Res. 2011. V. 13. P. 7187.
Essafti A., Ech-chamikh E., Azizan M. // Spectrosc. Lett. 2008. V. 41. P. 57. https://doi.org/10.1080/00387010801938228
Tallant D.R., Aselage T.L., Campbell A.N., Emin D. // Phys. Rev. B. 1989. V. 40. P. 5649. https://doi.org/10.1103/PhysRevB.40.5649