Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3

K. B. Aleinikova; Алейникова К. Б.; E. N. Zinchenko; Зинченко Е. Н.; N. V. Melnikova; Мельникова Н. В.

doi:10.31857/S0132665123600267

Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3

Authors: Aleinikova K.B.¹, Zinchenko E.N.¹, Melnikova N.V.²
Affiliations:
1. Voronezh State University, 394018, Voronezh, Russia
2. Institute of Natural Sciences and Mathematics, Ural Federal University, 620002, Yekaterinburg, Russia
Issue: Vol 49, No 5 (2023)
Pages: 499-511
Section: Articles
URL: https://rjmseer.com/0132-6651/article/view/663323
DOI: https://doi.org/10.31857/S0132665123600267
EDN: https://elibrary.ru/YBVGBH
ID: 663323

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Abstract

The atomic radial distribution function of vitreous AgGeAsSe3, obtained based on the experimental intensity curves taken with monochromatic copper and molybdenum radiation, is interpreted using a fragmentary model in the entire ordering region (~9 Å). It is shown that the glass consists of selenium and selenium-arsenic tetrahedra with germanium and silver atoms inside. The spatial arrangement of such tetrahedra in glass within the ordering region is similar to their arrangement in the GeAsSe and GeSe2 structures. It is proposed that the “openwork” structure of the fragments of these structures allows the movement of Ag+ ions (ionic conductivity) in vitreous AgGeAsSe3. Fragments of the structure of the ion-conducting compound Ag2Se are not found in the studied glass.

Keywords

atomic structure of glasses, atomic radial distribution function, fragmentary model, ion-conducting semiconductor glass

References

Chalcogenide Glasses: Preparation, Properties and Applications. Edited by J.-L. Adam, X. Zhang. Woodhead Publishing, 2014. 704 p.
Singh A.K., Jen T.-C. Chalcogenide. Carbon Nanotubes and Graphene Composites. London–New York: CRC Press, 2021. 293 p.
Иванов-Шиц А.К., Мурин И.В. Ионика твердого тела. Т. 1. СПб.: Изд-во С.-Петерб. ун-та, 2000. 616 с.
Kawamura J., Asayama R., Kuwata N., Kamishima O. Ionic transport in glass and polymer: Hierarchical structure and dynamics. In book “Physics of Solid State Ionics”. Edited by T. Sakuma and H. Takahashi. Research Signpost, 2006. P. 193–246.
Баранова Е.Р., Кобелев Л.Я., Злоказов В.Б. и др. Патент РФ № 2066076.
Melnikova N., Kheifets O., Babushkin A., Sukhanova G. Transport properties of amorphous chalcogenides in the system Cu–Ag–Ge–As–Se in a broad range of temperatures and pressures // European Physics Journal (EPJ) Web of Conferences. 2011. V. 15. P. 03004.
Алейникова К.Б., Зинченко Е.Н., Лихач Н.И. Дифракционные методы анализа нанодисперсных материалов // Заводская лаборатория. Диагностика материалов. 2005. Т. 71. № 4. С. 27–31.
Алейникова К.Б., Зинченко Е.Н. Фрагментарная модель как метод фазового анализа дифракционно-аморфных материалов // Журн. структурной химии. 2009. Т. 50. ПРИЛОЖЕНИЕ. С. 100–106.
Aleinikova K.B., Zinchenko E.N., Zmeikin A.A. Application of fragmentary model to analysis of the atomic structure of amorphous materials // J. of Physics: Conference Series. 2021. V. 1942. P. 012 011.
Cromer D.T., Waber J.T. Scattering Factors Computed from Relativistic Dirac-Slater Wave Functions // Acta Cryst. 1965. V. 18. P. 104–109.
Набитович И.Д., Стецив Я.И., Волощук Я.В. Определение когерентной интенсивности и интенсивности фона по экспериментальной кривой рассеяния электронов // Кристаллография. 1967. Т. 12. № 4. С. 584–590.
Мак-Кракен Д., Дорн У. Численные методы и программирование на Фортране. М.: Мир, 1977. 584 с.
Фаддеев М.А., Марков К.А. Численные методы. Нижний Новгород: Изд-во Нижегородского госуниверситета, 2005. 156 с.
Вайнштейн Б.К. К теории метода радиального распределения // Кристаллография. 1957. Т. 2. № 1. С. 29–37.
Уоррен Б.Е. Рентгеновские исследования структуры стекол // Кристаллография. 1971. Т. 16. № 6. С. 1264–1273.
Порай-Кошиц М.А. Практический курс рентгеноструктурного анализа. Т. II. М.: Изд-во МГУ, 1960. 632 с.
Алейникова К.Б., Зинченко Е.Н., Змейкин А.А. Особенности атомного строения аморфного сплава Al85Ni10Nd5 // Физика и химия стекла. 2021. Т. 47. № 5. С. 543–553.
Aleinikova K.B., Likhach N.I. Fragmentary Model as Applied to Analysis of Spectroscopically Pure Vitreous SiO2 // Glass Phys. Chem. 2005. V. 31. P. 648–655.
Oliveria M., McMullan R.K., Wuensch B.J. Single crystal neutron diffraction analysis of the cation distribution in the high-temperature phases α-Cu2 – xS, α-Cu2 – xSe, and α-Ag2Se // Solid State Ionics. 1988. V. 28–30. P. 1332–1337.
Carre D., Ollitrault-Fichet R., Flahaut J. Structure de Ag8GeSe6 beta // Acta Cryst. B. 1980. V. 36. P. 245–249.
Нуриев И.Р., Имамов Р.М., Шафизаде Р.Б. О структуре новой кубической фазы в системе Ag–Se // Кристаллография. 1971. Т. 16. С. 1028–1030.
Villarreal M.A., de Chalbaud L.M., Fernadez B.J. et al. Preparation and electrical characterization of the compound CuAgGeSe3 // Journal of Physics: Conference Series. 2009. V. 167. P. 012045.
Hulliger F., Siegrist T. The crystal structure of GeAsSe // Materials Research Bulletin. 1981. V. 16. P. 1245–1251.
Dittmar G., Schäfer H. Die Kristallstruktur von Germaniumdiselenid // Acta Cryst. B. 1976. V. 32. P. 2726–2728.
Pradel A., Piarristeguy A.A. Ag-conducting chalcogenide glasses: applications in programmable metallization cells. In book “Nanostructured Materials for advanced Technological Application”. Netherlands: Springer, 2009. P. 435–444.
Cuello G.J., Piarristeguy A.A., Fernandez-Martinez A. et al. Structure of chalcogenide glasses by neutron diffraction // Journal of Non-Crystalline Solids. 2007. V. 353. P. 729–732.