Sensor Layers Based on Semiconductor Nanoparticles and Their Electronic Structure

L. I. Trakhtenberg; Трахтенберг Л. И.

doi:10.31857/S0207401X2305014X

Sensor Layers Based on Semiconductor Nanoparticles and Their Electronic Structure

作者: Trakhtenberg L.I.¹^,2
隶属关系:
1. Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences
2. Moscow State University
期: 卷 42, 编号 5 (2023)
页面: 87-94
栏目: Chemical physics of nanomaterials
URL: https://rjmseer.com/0207-401X/article/view/674873
DOI: https://doi.org/10.31857/S0207401X2305014X
EDN: https://elibrary.ru/PCONYX
ID: 674873

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详细

Studies on modeling the charge distribution in semiconductor nanoparticles are analyzed. The charge distribution largely depends on the type of nanoparticles and the concentration of conduction electrons. In the case of nanoparticles with a high content of electrons in the conduction band, the negatively charged layer plays an important role. The conductivity and sensor effect depend on this layer. It is shown that both the distribution of electrons and the sensor effect differ significantly in one- and two-component systems. The reasons for this difference are discussed

关键词

modeling, electron donors, nanoparticles, conductometric sensor, charge distribution, negatively charged surface layer, one- and two-component systems, electron traps

作者简介

L. Trakhtenberg

Semenov Federal Research Center for Chemical Physics, Russian Academy of Sciences; Moscow State University

编辑信件的主要联系方式.
Email: litrakh@gmail.com
Moscow, Russia; Moscow, Russia

参考

Barsan N., Weimar U. // J. Electroceram. 2001. V. 7. P. 143.
Yamazoe N., Shimanoe K. // Sens. Actuators, B. 2008. V. 128. P. 566.
Gerasimov G.N., Gromov V.F., Ilegbusi O.J., Trakhtenberg L.I. // Sens. Actuators, B. 2017. V. 240. P. 613.
Герасимов Г.Н., Громов В.Ф., Иким М.И., Трахтенберг Л.И. // Хим. физика. 2021. Т. 40. С. 65.
Prathap P., Gowri Devi G., Subbaiah Y.P.V., Ramakrishna Reddy K.T., Ganesan V. // Curr. Appl. Phys. 2008. V. 8. P. 120.
Jimenez L.C., Mendez H.A., Paez B.A., Ramirez M.E., Rodriguez H. // Brazilian J. Phys. 2006. V. 36. P. 1017.
Kozhushner. M.A., Lidskii B.V., Oleynik I.I., Posvyanskii V.S., Trakhtenberg L.I. // J. Phys. Chem. C. 2015. V. 119. 16 286.
Bodneva V.L., Ilegbusi O.J., Kozhushner M.A et al. // Sens. Actuators, B. 2019. V. 287. P. 218.
Kurmangaleev K.S., Ikim M.I., Kozhushner M.A., Trakhtenberg L.I. // Appl. Surf. Sci. 2021. V. 546. 149 011.
Gerasimov G.N., Gromov V.F., Ikim M.I., Ilegbusi O.J., Trakhtenberg L.I. // Sens. Actuators, B. 2019. V. 279. P. 22.
Курмангалеев К.С. Дис. … канд. физ.-мат. наук. М.: ИХФ РАН, 2022.
Kozhushner M.A., Trakhtenberg L.I., Landerville A.C., Oleynik I.I. // J. Phys. Chem. C. 2013. V. 117. 1 1562.
Kozhushner M.A., Trakhtenberg L.I., Bodneva V.L. et al. // Ibid. 2014. V. 118. P. 11444.
Белышева Т.В., Герасимов Г.Н., Громов В.Ф. и др. // ЖФХ. 2010. Т. 84. С. 1706.
Trakhtenberg L.I., Gerasimov G.N., Gromov V.F., Belysheva T.V., Ilegbusi O.J. // Sens. Actuators, B: Chemical. 2012. V. 169. P. 32.
Trakhtenberg L.I., Gerasimov G.N., Gromov V.F., Belysheva T.V., Ilegbusi O.J. // Ibid. 2013. V. 187. P. 514.
Trakhtenberg L.I., Astapenko V.A., Sakhno S.V. et al. // J. Phys. Chem. C. 2016. V. 120. 23 851.
Kozhushner M.A., Bodneva V.L., Oleynik I.I., Belysheva T.V., Ikim M.I., Trakhtenberg L.I. // Ibid. 2017. V. 121. P. 6940.
Ahlers S., Miller G., Doll T. // Sens. Actuators, B. 2005. V. 107. P. 587.
Xu C., Tamaki J., Miura N., Yamazoe N. // Ibid. 1991. V. 3. P. 147.
Gerasimov G.N., Ikim M.I., Gromov V.F., Ilegbusi O.J., Trakhtenberg L.I. // J. Alloys Compd. 2021. V. 883. 160 817.
Нагаев Э.Л. // Успехи физических наук. 1992. Т. 162. С. 49.
Dey A. // Mat. Sci. Eng. B. 2018. V. 229. P. 206.
Yamazoe N., Kurorawa Y., Seiyama T. // Sens. Actuators, B. 1983. V. 4. P. 283.
Trakhtenberg L.I., Gerasimov G.N., Gromov V.F., Belysheva T.V., Ilegbusi O.J. // Sens. Actuators, B. 2015. V. 209. P. 562.
Xu L., Song H., Dong B. // Inorg. Chem. 2010. V. 49. 10590.
Jiang F., Zhao H., Chen H., Xu C., Chen J. // RSC Advances. 2016. V. 6. 72015.
Громов В.Ф., Иким М.И., Герасимов Г.Н., Трахтенберг Л.И. // Хим. физика. 2021. Т. 40. № 12. С. 76.
Yang F., Graciani J., Evans J. et al. // J. Amer. Chem. Soc. 2011. V. 133. P. 3444.