Theoretical study of electron exchange under grazing scattering on thin metal films

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Electron exchange during grazing scattering of hydrogen ions on thin metal films is considered. The main characteristic being studied is the yield fraction, i.e. the probability of the formation of a certain charge state of a scattered particle (in the case under consideration, H–) as a function of the velocity component parallel to the surface of the sample. Based on an analysis of the electron distribution in the space of wave vectors, using the generally accepted model of displacement of Fermi spheres, it was shown that the dependence of the probability of the formation of a negative hydrogen ion on the parallel velocity component should decrease monotonically.

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Sobre autores

I. Gainullin

Lomonosov Moscow State University

Autor responsável pela correspondência
Email: ivan.gainullin@physics.msu.ru
Rússia, Moscow

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2. Fig. 1. Illustration of the calculation of electron loss and capture coefficients, Fermi sphere: for W(110) in the static case (1); for vpar = 0.5 a.u. (2). The shaded area shows the distribution density of the active electron in k-space f(k).

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3. Fig. 2. Illustration of the model of Fermi sphere shift during glancing scattering: the radius of the metal Fermi sphere is 1.0 a.u. (solid line), the radius of the active electron distribution sphere is 0.9 a.u. (dashed line). The parallel velocity component and the fraction of the active electron distribution density located inside the metal Fermi sphere are indicated.

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4. Fig. 3. Influence of Al film thickness on the distribution of the active electron in two-dimensional k-space. The H– ion is located at a distance of 8 a.u. from the film surface.

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5. Fig. 4. Distribution density of the wave function of the active electron of the H– ion located at a distance of 8 a.u. from the surface of the Al film with a thickness of 15 a.u.

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6. Fig. 5. Set of Fermi discs for a thin film.

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7. Fig. 6. Model calculation of the dependence of the H– ion yield fraction on parallel velocity during scattering on an Al film with a thickness of 15 a.u.

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