Wave-like periodic structures on the silicon surface initiated by irradiation with a focused gallium ion beam

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The processes of microrelief formation on the Si(100) surface under irradiation with a 30 keV Ga+ ion beam and a fluence of D = 1.25 × 1018–2 × 1019 cm–2 at incidence angles θ = 30°–85° was investigated. It was found that in the θ angular range 40°–70° faceted ripples were formed on the Si surface, and at θ = 30° sinusoidal ripples were formed. The experimental dependence of the wavelength of the periodic structure on the irradiation time λ(t) ~ tn, n = 0.33–0.35, was obtained. The average velocities of relief propagation and their direction relative to the direction of incident ions in the cases of θ = 30° and 40° were determined, which were –5.3 ± 0.6 and –6.3 ± 0.6 nm/s, respectively. The results obtained are discussed in detail within the framework of existing models of the formation of ripples on a surface under ion beam irradiation.

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作者简介

V. Bachurin

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

 Yaroslavl Branch

俄罗斯联邦, Yaroslavl

M. Smirnova

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

 Yaroslavl Branch

俄罗斯联邦, Yaroslavl

K. Lobzov

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

Yaroslavl Branch

俄罗斯联邦, Yaroslavl

M. Lebedev

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

Yaroslavl Branch

俄罗斯联邦, Yaroslavl

L. Mazaletsky

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

 Yaroslavl Branch

俄罗斯联邦, Yaroslavl

D. Pukhov

Valiev Institute of Physics and Technology of the RAS

Email: vibachurin@mail.ru

Yaroslavl Branch

俄罗斯联邦, Yaroslavl

A. Churilov

Valiev Institute of Physics and Technology of the RAS

编辑信件的主要联系方式.
Email: vibachurin@mail.ru

Yaroslavl Branch

俄罗斯联邦, Yaroslavl

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2. Fig. 1. Dependences of the curvature coefficients Sx (1) and Sy (2) on the angle of incidence of the ion beam, calculated using the “crater function” model with the SDTrimSP program.

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3. Fig. 2. SEM images of the Si surface at different angles of incidence of the Ga+ ion beam: a, b — 40°; c, d — 50°; d, f — 60°. D = 3.75 × 1018 cm–2 (a, c, d) and 6.25 × 1018 cm–2 (b, d, f).

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4. Fig. 3. Enlarged fragment of the Si surface relief formed as a result of irradiation with a beam of Ga+ ions at θ = 50° and D = 1019 cm–2.

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5. Fig. 4. SEM images of cross sections of Si samples obtained as a result of irradiation with a beam of Ga+ ions at θ = 30°, D = 2.5 × 1018 cm–2 (a) and θ = 50°, D = 6.25 × 1018 cm–2 (b).

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6. Fig. 5. Experimental dependences of the relief wavelength on the irradiation time at θ = 30° (empty symbols) and 40° (filled symbols). The dashed and dash-dotted lines, respectively, show the approximations by the power dependences λ ~ tn, where n = 0.33, 0.35.

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7. Fig. 6. SEM images of fragments of the Si surface irradiated with Ga+ ions at θ = 30° (a) and 40° (b). The images were obtained in situ on a Quanta 200i dual-beam setup. The white dots mark the positions of individual wave sections at each stage of irradiation. With a successive increase in t, their shift in the direction opposite to the direction of incidence of the ion beam is observed.

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8. Fig. 7. STEM images of the near-surface regions of Si after irradiation with Ga+ ions with an energy of 30 keV at θ = 30° (a) and 40° (b), D = 1017 cm–2.

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9. Fig. 8. Schematic representation of the process of nucleation of a wave-like relief at the edge of a sputtering crater during irradiation of the Si surface with a beam of Ga+ ions in the case of θ > 40°.

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