Conduction band electronic states of ultrathin furan-phenylene co-oligomer on the surfaces of oxidized silicon and of layer-by-layer grown zinc oxide

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Abstract

The paper reports on results of an investigation of the electronic states of the conduction band of ultrathin films of furan-phenylene co-oligomer 1,4-bis(5-phenylfuran-2-yl)benzene (FP5) and the results of an investigation of the interfacial potential barrier upon the formation of these films on the surfaces of (SiO2)n-Si and of layer-by-layer deposited ZnO. Upon deposition of an 8–10 nm thick FP5 film, the total current spectroscopy (TCS) technique was used for investigation within the energy range from 5 eV to 20 eV above EF. FP5 films on the (SiO2)n-Si surface showed a domain structure with a characteristic domain size of the order of 1 micro.m × 1 micro.m and a surface roughness within the domain under 1 nm. In contrast, FP5 on the ZnO surface showed a granular structure with a grain height of 40–50 nm.

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About the authors

А. S. Komolov

St. Petersburg State University

Author for correspondence.
Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

I. A. Pronin

Penza State University

Email: a.komolov@spbu.ru
Russian Federation, Penza

Е. F. Lazneva

St. Petersburg State University

Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

V. S. Sobolev

St. Petersburg State University

Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

E. A. Dubov

St. Petersburg State University

Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

A. A. Komolova

St. Petersburg State University

Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

Е. V. Zhizhin

St. Petersburg State University

Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

D. A. Pudikov

St. Petersburg State University

Email: a.komolov@spbu.ru
Russian Federation, St. Petersburg

S. A. Pshenichnyuk

Institute of Molecule and Crystal Physics, Ufa Federal Research Centre, Russian Academy of Sciences

Email: a.komolov@spbu.ru
Russian Federation, Ufa

Ch. S. Becker

N. N. Vorozhtsov Novosibirsk Institute of Organic Chemistry, Siberian Branch of Russian Academy of Sciences

Email: a.komolov@spbu.ru
Russian Federation, Novosibirsk

M. S. Kazantsev

N. N. Vorozhtsov Novosibirsk Institute of Organic Chemistry, Siberian Branch of Russian Academy of Sciences

Email: a.komolov@spbu.ru
Russian Federation, Novosibirsk

F. Dj. Akbarova

Physical-Technical Institute, Uzbekistan Academy of Sciences

Email: a.komolov@spbu.ru
Uzbekistan, Tashkent

U. B. Sharopov

Physical-Technical Institute, Uzbekistan Academy of Sciences; Bukhara State University

Email: a.komolov@spbu.ru
Uzbekistan, Tashkent; Bukhara

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Supplementary files

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2. Fig. 1. Structural formula of 1,4-bis(5-phenylfuran-2-yl)benzene (FP5) co-oligomer molecules.

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3. Fig. 2. Fine structure of the total current spectrum: a – FP5 films 8 nm thick on a ZnO surface; b – a series of FP5 films 0 (1), 1 (2), 2 (3), 3 (4), 5 (5), 8 nm (6) thick during deposition on a (SiO2)n-Si substrate. The most distinct maxima P1–P3 are marked. The vertical dotted lines are drawn for ease of comparison of their positions.

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4. Fig. 3. Analysis of the energy position of the primary maximum of the total current spectrum, demonstrating the change in the position of the vacuum level Evac relative to EF, as the thickness of the FP5 film layer on the surface of ZnO (a) and (SiO2)n-Si (b) increases.

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5. Fig. 4. AFM image of a 2 × 2 μm section of the FP5 film surface on (SiO2)n-Si (a) and ZnO (b) surfaces. The profile of the surface section on the marked segment is shown below.

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