Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method

T. G. Yugova; Югова Т. Г.; V. A. Chuprakov; Чупраков В. А.; N. A. Sanzharovsky; Санжаровский Н. А.; A. A. Yugov; Югов А. А.; I. D. Martynov; Мартынов И. Д.; S. N. Knyazev; Князев С. Н.

doi:10.31857/S0023476124030036

Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method

Authors: Yugova T.G.¹, Chuprakov V.A.¹, Sanzharovsky N.A.¹, Yugov A.A.¹, Martynov I.D.¹, Knyazev S.N.¹
Affiliations:
1. The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Issue: Vol 69, No 3 (2024)
Pages: 393-399
Section: REAL STRUCTURE OF CRYSTALS
URL: https://rjmseer.com/0023-4761/article/view/673168
DOI: https://doi.org/10.31857/S0023476124030036
EDN: https://elibrary.ru/XPGUJR
ID: 673168

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Abstract

The effect of a traveling magnetic field on the parameters of Te-doped GaAs single crystals in the carrier density range of 5 × 10¹⁷–2 × 10¹⁸ cm^–3 has been studied. A traveling magnetic field was induced in a melt by a graphite inductor located in the setup chamber around the main heater. It is shown that a high-frequency magnetic field slightly reduces the dislocation density in the crystals without changing the shape of the dislocation distribution over their cross sections. The magnetic field affects the impurity distribution along the crystal axis, almost doubling the distance between the striation bands from 9 µm in the absence of magnetic field to 17 µm in a field with a frequency of 300 Hz.

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