Study on the Photosensitivity of a Composite Based on Lead Selenide and Selenite

V. V. Tomaev; Томаев В. В.; T. V. Stoyanova; Стоянова Т. В.; Yu. V. Petrov; Петров Ю. В.; V. Yu. Mikhailovsky; Михайловский В. Ю.

doi:10.31857/S0132665122600923

Study on the Photosensitivity of a Composite Based on Lead Selenide and Selenite

Authors: Tomaev V.V.¹^,2, Stoyanova T.V.², Petrov Y.V.³, Mikhailovsky V.Y.³
Affiliations:
1. St. Petersburg State Technological Institute (Technical University), 190013, St. Petersburg, Russia
2. St. Petersburg Mining University, 199106, St. Petersburg, Russia
3. Faculty of Physics, St. Petersburg State University, 198504, St. Petersburg, Russia
Issue: Vol 49, No 5 (2023)
Pages: 512-521
Section: Articles
URL: https://rjmseer.com/0132-6651/article/view/663330
DOI: https://doi.org/10.31857/S0132665122600923
EDN: https://elibrary.ru/EKGOHU
ID: 663330

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Abstract

This paper discusses the technology of formation of photoresistive structures based on a composite of lead selenide and lead selenite. The structures are formed by the oxidation of n-PbSe polycrystalline films. Film The surface modification mechanism of n-PbSe films in the oxidation process is analyzed by a Zeiss Merlin scanning electron microscope (SEM). The new results of the authors on the oxidation mechanism of n-PbSe, together with their earlier publications, are summarized and their consistency with each other is examined. A theoretical model (hypothesis) of the potential profile of a photosensitive heterojunction is proposed, in which each crystal of the n-PbSe film during oxidation in an atmosphere of dry air forms a continuous shell on the p-PbSeO3 surface. The hypothesis on the structural model of the photosensitive heterojunction proposed by other authors, which is based on the oxidation mechanism proposed by us, is practically confirmed in this study.

Keywords

semiconductor films, photoconductivity, lead selenide, lead selenite, two-phase composite, ultraviolet, optical radiation, source of Ga+ ions

References

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