Plasma Excitations in SiGe/Si Quantum Wells

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Abstract

Plasma and magnetoplasma excitations in high-quality undoped two-dimensional electron systems based on SiGe/Si quantum wells are studied in detail. A two-dimensional electron system is formed by applying a vo-ltage to the top gate, which is partially transparent to subterahertz radiation in the frequency range of 20‒160 GHz. The results for SiGe/Si quantum wells with a Sb δ-doping layer are also presented for comparison. The transport and quantum scattering times for both structures are directly determined. It has been found that the effective electron mass is almost independent of the two-dimensional electron density in a wide density range.

About the authors

A. R. Khisameeva

Institute of Solid State Physics, Russian Academy of Sciences,

Email: akhisameeva@issp.ac.ru
Chernogolovka, Moscow region, 142432 Russia

A. V. Shchepetil'nikov

Institute of Solid State Physics, Russian Academy of Sciences;HSE University

Email: akhisameeva@issp.ac.ru
Chernogolovka, Moscow region, 142432 Russia;Moscow, 101000 Russia

G. A. Nikolaev

Institute of Solid State Physics, Russian Academy of Sciences,

Email: akhisameeva@issp.ac.ru
Chernogolovka, Moscow region, 142432 Russia

S. A. Lopatina

Institute of Solid State Physics, Russian Academy of Sciences;HSE University

Email: akhisameeva@issp.ac.ru
Chernogolovka, Moscow region, 142432 Russia;Moscow, 101000 Russia

Ya. V. Fedotova

Institute of Solid State Physics, Russian Academy of Sciences

Email: akhisameeva@issp.ac.ru
Chernogolovka, Moscow region, 142432 Russia

I. V. Kukushkin

Institute of Solid State Physics, Russian Academy of Sciences

Author for correspondence.
Email: akhisameeva@issp.ac.ru
Chernogolovka, Moscow region, 142432 Russia

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