Identification of Optically Active Quartet Spin Centers Based on a Si Vacancy in SiC Promising for Quantum Technologies

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Abstract

Optically active (bright) and optically inactive (dark) quartet S = 3/2 spin color centers including a negatively charged Si vacancy have been identified in silicon carbide using high-frequency electron nuclear double resonance on the nuclei of the 13C isotope, enhanced by a tenfold increase in its content. The alignment of populations of spin levels is optically induced in a bright center promising for quantum technologies, whereas the populations of spin levels in a dark center, which is an isolated negatively charged Si vacancy V-Si, correspond to a Boltzmann distribution and do not change under optical excitation.

About the authors

R. A. Babunts

Ioffe Institute

Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia

Yu. A. Uspenskaya

Ioffe Institute

Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia

A. P. Bundakova

Ioffe Institute

Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia

G. V. Mamin

Kazan Federal University

Email: yulia.uspenskaya@mail.ioffe.ru
420008, Kazan, Russia

E. N. Mokhov

Ioffe Institute

Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia

P. G. Baranov

Ioffe Institute

Author for correspondence.
Email: yulia.uspenskaya@mail.ioffe.ru
194021, St. Petersburg, Russia

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