Formation of Nanoclusters in Zinc-Implanted Crystalline Quartz

V. V. Privezentsev; Привезенцев В. В.; A. A. Firsov; Фирсов А. А.; V. S. Kulikauskas; Куликаускас В. С.; V. V. Zatekin; Затекин В. В.; A. N. Tereshchenko; Терещенко А. Н.

doi:10.31857/S1028096023030147

Formation of Nanoclusters in Zinc-Implanted Crystalline Quartz

Authors: Privezentsev V.V.¹, Firsov A.A.¹, Kulikauskas V.S.², Zatekin V.V.², Tereshchenko A.N.³
Affiliations:
1. Scientific Research Institute for System Analysis RAS
2. Lomonosov Moscow State University, Skobeltsyn Institute of Nuclear Physics
3. Osipyan Institute of Solid State Physics RAS
Issue: No 3 (2023)
Pages: 53-58
Section: Articles
URL: https://rjmseer.com/1028-0960/article/view/664594
DOI: https://doi.org/10.31857/S1028096023030147
EDN: https://elibrary.ru/LFUSDC
ID: 664594

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The results of the synthesis of nanoclusters of metallic zinc and its oxide in crystalline quartz implanted with ⁶⁴Zn⁺ ions with a dose of 5 × 10¹⁶ cm^–2 and energy of 40 keV and annealed in an oxygen atmosphere in the temperature range 400–900°C are presented. Scanning electron microscopy combined with energy-dispersive spectroscopy, as well as Auger electron spectroscopy and photoluminescence, were used for the study. After implantation, separate nanoclusters of metallic zinc with a size of less than 1 µm were fixed on the surface and in the near-surface layer of quartz. It was established that, during annealing, the sample underwent a transition from the phase of metallic Zn to the phases of its oxide ZnO and silicate Zn₂SiO₄. After annealing at 700°C, which is the most optimal for obtaining the ZnO phase, zinc oxide nanoclusters smaller than 500 nm in size were formed in the near-surface layer of quartz. A peak in the form of a doublet at a wavelength of 370 nm was observed in the photoluminescence spectrum due to exciton luminescence in zinc oxide. After annealing at 800°C, the ZnO phase degraded and the zinc silicate phase Zn₂SiO₄ was formed.

Keywords

quartz, implantation, zinc, annealing, nanoclusters, zinc oxide, silicate.

References

Кузьмина И.П., Никитенко В.А. Оксид цинка. Получение и свойства. M.: Нaукa, 1984. 166 с.
Özgür Ü., Alivov Ya. I., Liu C. et al. // J. Appl. Phys. 2005. V. 98. P. 041301.
Litton C.W, Collins T.C., Reynolds D.S, Zinc Oxide Materials for Electronic and Optoelectronic Device Application. Chichester: Wiley, 2011.
Amekura H., Kishimoto N. Toward Functional Nanomaterials // Lecture Notes in Nanoscale Science and Technology / Ed. Wang Zh.M. 2009. V. 5.
Liu Y.X., Liu Y.C., Shen D. et al. // J. Cryst. Growth. 2002. V. 240. P. 152.
Zatsepin D., Zatsepin A., Boukhvalov D.W. et al. // J. Non-Cryst. Solids. 2016. V. 432. P. 183.
Straumal B.B., Mazilkin A.A., Protasova S.G. et al. // Phys. Rev. B. 2009. V. 79. P. 205206.
Smestad G.P., Gratzel M. // J. Chem. Educ. 1998. V. 75. P. 752.
Urfa Y., Çorumlu V., Altındal A. // Mater. Chem. Phys. 2021. V. 264. P. 124473.
Sirelkhatim S., Mahmud A., Seeni N.H.M., Kaus L.C., Ann S.K., ohd Bakhori, Hasan H., Mohamad D. // Nano-Micro Lett. 2015. V. 7. P. 219.
Inbasekaran S., Senthil R., Ramamurthy G., Sastry T.P. // Intern. J. Innov. Res. Sci. Engin. Technol. 2014. V. 3. P. 8601.
Jiang C.Y., Sun X.W., Lo G.Q. et al. // Appl. Phys. Lett. 2007. V. 90. P. 263501.
Li C., Yang Y., Sun X.W. et al. // Nanotechnology. 2007. V. 18. P. 135604.
Chu S., Olmedo M., Yang Zh. et al. // Appl. Phys. Lett. 2008. V. 93. P. 181106.
Amekura H., Ohnuma M., Kishimoto N. et al. // J. Appl. Phys. 2008. V. 104. P. 114309.
Privezentsev V.V., Makunin A.V., Batrakov A.A. et al. // Semiconds. 2018. V. 52. P. 645.
Броудай И., Мерей Дж. Физические основы микротехнологии. М.: Мир, 1985. 496 с.
Ziegler J.F., Biersack J.P. SRIM 2008 (http:// www.srim.org).
Chen Y., Bagnall D.M., Koh H.J. et al. // J. Appl. Phys. 1998. V. 84. P. 3912.
Amekura H., Umeda N., Sakuma Y. et al. // Appl. Phys. Lett. 2005. V. 87. P. 013109.