Synthesis of diamond films with reduced roughness in microwave plasma

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Abstract

The work studies the effect of nitrogen additions on the secondary nucleation (nucleation) of diamond during its synthesis by chemical vapor deposition (CVD). A series of polycrystalline diamond (PCD) films 2 μm thick were grown on silicon substrates in methane-hydrogen-nitrogen gas mixtures with different nitrogen concentrations (0–1%). The structure and roughness of the grown films were studied using scanning electron microscopy (SEM) and optical profilometry. It has been shown that small additions of nitrogen play a key role in the processes of secondary nucleation of diamond, having a significant impact on the morphology of films. The comparison of the characteristics of grown PCD allowed us to find the optimal nitrogen concentration [N2] ≈ 0.2% for the formation of nanocrystalline diamond (NCD) films with low surface roughness and increased growth rate. The results obtained are expected to be used to optimize the parameters of CVD synthesis of PCD films for use as protective or friction-reducing layers, as well as for the manufacture of superhard cutting tools.

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About the authors

А. K. Martyanov

Prokhorov General Physics Institute of the Russian Academy of Sciences

Author for correspondence.
Email: martyanov@nsc.gpi.ru
Russian Federation, Moscow

I. A. Tiazhelov

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: martyanov@nsc.gpi.ru
Russian Federation, Moscow

S. S. Savin

MIREA – Russian Technological University

Email: martyanov@nsc.gpi.ru
Russian Federation, Moscow

A. F. Popovich

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: martyanov@nsc.gpi.ru
Russian Federation, Moscow

V. S. Sedov

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: martyanov@nsc.gpi.ru
Russian Federation, Moscow

V. I. Konov

Prokhorov General Physics Institute of the Russian Academy of Sciences

Email: martyanov@nsc.gpi.ru

Academician of the RAS

Russian Federation, Moscow

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Supplementary files

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2. Fig. 1. Images of SEM PKA films synthesized at the substrate temperature Ts = 850 ° C and various nitrogen concentrations vN.

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3. Fig. 2. The growth rate of PKA films synthesized at different concentrations of nitrogen vN.

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4. Fig. 3. Values of the “mean square surface height" (RMS) of diamond films grown at different concentrations of nitrogen vN.

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