QUANTIZATION OF ELECTRICAL CONDUCTANCE IN LAYERED Zr/ZrO2/Au MEMRISTIVE STRUCTURES

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Abstract

Anodic zirconia nanotubes are a promising functional medium for the formation of non-volatile resistive memory cells. The current-voltage characteristics in the region of low conductivity of the fabricated Zr/ZrO2/Au memristor structures have been studied in this work. For the first time, the reversible mechanisms of formation/destruction of single quantum conductors based on oxygen vacancies, which participate in processes of multiple resistive switching between low- and high-resistance states in a nanotubular dioxide layer, have been analyzed. An equivalent electrical circuit of a parallel resistor connection have been proposed and discussed to describe the observed memristive behavior of the studied layered structures.

About the authors

A. S. Vokhmintsev

NANOTECH Centre, Ural Federal University

Email: i.a.weinstein@urfu.ru
Russian Federation, 620002, Ekaterinburg

I. A. Petrenyov

NANOTECH Centre, Ural Federal University

Email: i.a.weinstein@urfu.ru
Russian Federation, 620002, Ekaterinburg

R. V. Kamalov

NANOTECH Centre, Ural Federal University

Email: i.a.weinstein@urfu.ru
Russian Federation, 620002, Ekaterinburg

M. S. Karabanalov

NANOTECH Centre, Ural Federal University

Email: i.a.weinstein@urfu.ru
Russian Federation, 620002, Ekaterinburg

I. A. Weinstein

NANOTECH Centre, Ural Federal University; Institute of Metallurgy, Ural Branch of the Russian Academy of Sciences

Author for correspondence.
Email: i.a.weinstein@urfu.ru
Russian Federation, 620002, Ekaterinburg; Russian Federation, 620016, Ekaterinburg

A. A. Rempel

NANOTECH Centre, Ural Federal University; Institute of Metallurgy, Ural Branch of the Russian Academy of Sciences

Email: i.a.weinstein@urfu.ru
Russian Federation, 620002, Ekaterinburg; Russian Federation, 620016, Ekaterinburg

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Copyright (c) 2023 А.С. Вохминцев, И.А. Петренёв, Р.В. Камалов, М.С. Карабаналов, И.А. Вайнштейн, А.А. Ремпель