Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption

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Abstract

IR light-emitting diodes based on InGaAs/AlGaAs multiple quantum wells and AlxGa1–xAsyP1–y-layers that compensate stresses in the active region have been developed. The optical losses caused by absorption of radiation generated by the active region (λ = 940 nm) were studied at different doping levels of n-GaAs substrates. It has been shown that reducing the donor doping level from 4 × 1018 to 5 × × 1017 cm–3 gives an increase in the quantum efficiency of LEDs by ~ 30%. A technology that eliminates optical losses caused by absorption during radiation output has been developed. By removing the growth substrate and transferring the device structure to a carrier substrate with the formation of a rear metal reflector, LEDs were created that demonstrate a twofold increase in external quantum efficiency and efficiency (~ 40%) compared to the technology of outputting radiation through an n-GaAs substrate.

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About the authors

R. А. Salii

Ioffe Institute

Author for correspondence.
Email: r.saliy@mail.ioffe.ru
Russian Federation, St. Petersburg

A. V. Malevskaya

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Russian Federation, St. Petersburg

D. А. Malevskii

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Russian Federation, St. Petersburg

S. А. Mintairov

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Russian Federation, St. Petersburg

A. M. Nadtochiy

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Russian Federation, St. Petersburg

N. A. Kalyuzhnyy

Ioffe Institute

Email: r.saliy@mail.ioffe.ru
Russian Federation, St. Petersburg

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Supplementary files

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2. Fig. 1. Heterostructures for manufacturing LEDs using standard post-growth technology: direct growth (a), using the technology of transfer to a carrier substrate – reverse growth (b).

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3. Fig. 2. Sequence of post-growth operations in the manufacture of inverted LEDs based on reverse-growth heterostructures with technologies for their transfer to a carrier substrate and application of a rear metal reflector.

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4. Fig. 3. PL spectra for 850R (1) and 940R (2) heterostructures at room temperature.

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5. Fig. 4. Dependence of the IPL maximum on the thickness of the compensating layer in a series of In0.17GaAs/Al0.25GaAsP0.04 MQW samples (series of 940SB1 samples).

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6. Fig. 5. Room-temperature PL spectra for heterostructures with MQWs: 1 – 940R, 2 – 940SB1, 3 – 940SB2, 4 – 940SB3A, 5 – 940SB3B; inset – dependence of the IPL maximum at room temperature on the product da/a and the layer thickness.

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7. Fig. 6. Current dependences of external quantum efficiency (a), energy efficiency (b), output optical power for LEDs on a substrate with a doping level of 4 × 1018 cm–3 (HDS-led), 5 × 1017 cm–3 (LDS-led) and for LEDs manufactured using the transfer technology onto a carrier substrate (TSC-led) (c).

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