Light-emitting AlGaAs/GaAs diodes based on ingaas strain-compensated quantum wells with minimized internal losses OF 940 nm radiation absorption
- Authors: Salii R.А.1, Malevskaya A.V.1, Malevskii D.А.1, Mintairov S.А.1, Nadtochiy A.M.1, Kalyuzhnyy N.A.1
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Affiliations:
- Ioffe Institute
- Issue: Vol 69, No 4 (2024)
- Pages: 743-752
- Section: ПРИБОРЫ, АППАРАТУРА
- URL: https://rjmseer.com/0023-4761/article/view/673165
- DOI: https://doi.org/10.31857/S0023476124040214
- EDN: https://elibrary.ru/XBARUR
- ID: 673165
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